LASER STUDIES OF THE REACTIVITY OF SIO WITH THE SURFACE OF A DEPOSITING FILM

被引:18
作者
BUSS, RJ [1 ]
HO, P [1 ]
WEBER, ME [1 ]
机构
[1] TEXAS INSTRUMENTS INC,DALLAS,TX 75265
关键词
GAS-SURFACE REACTIONS; IRIS TECHNIQUE; SIO PLASMA FILM DEPOSITION;
D O I
10.1007/BF01447170
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
The reactivity of SiO produced in a SiCl4/02 plasma with the surface of a depositing silicon oxide film has been measured to be near zero for surface temperatures of 25-500-degrees-C using the IRIS technique (imaging of radicals interacting with surfaces). This method combines spatially resolved laser-induced fluorescence with molecular beam techniques. The SiO desorbs from the surface with a spatial distribution consistent with a cosine angular distribution.
引用
收藏
页码:61 / 76
页数:16
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