HETEROEPITAXY OF WIDE BANDGAP TERNARY SEMICONDUCTORS

被引：8

作者：

BACHMANN, KJ

XING, GC

SCROGGS, JS

TRAN, HT

ITO, K

CASTLEBERRY, H

WOOD, G

机构：

[1] N CAROLINA STATE UNIV,DEPT CHEM ENGN,RALEIGH,NC 27695

[2] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

[3] N CAROLINA STATE UNIV,DEPT MATH,RALEIGH,NC 27695

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷

关键词：

HETEROEPITAXY; I-III-VI(2)COMPOUNDS; II-IV-V(2)COMPOUNDS; MOCVD; MBE; LPE; HALIDE TRANSPORT;

D O I：

10.7567/JJAPS.32S3.133

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

页码：133 / 138

页数：6

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