IMPROVED SILICON THIN-FILM GROWTH ON GLASS SUBSTRATES BY PERIODIC REGROWTH

被引：15

作者：

SHI, Z

GREEN, MA

机构：

[1] Centre for Photovoltaic Devices and Systems, University of New South Wales, Kensington

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 11期

关键词：

Crystal growth - Glass - Silicon - Solar cells - Substrates;

D O I：

10.1149/1.2221025

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The periodic regrowth technique has been used to improve the quality of polycrystalline silicon thin films grown on glass substrates from molten metal solutions. Periodically repeating the melt-back and regrowth procedures removed the small-grained crystals, suppressed the rapid growth of crystals perpendicular to the substrate, and enhanced the growth of slower growing crystals in the lateral direction. This process markedly improved the smoothness, grain size, crystal quality, and (111) preferred orientation of the silicon thin films.

引用

页码：3290 / 3293

页数：4

共 18 条

[1]

Chopra K.L., 1983, THIN FILM SOLAR CELL, P195, DOI 10.1007/978-1-4899-0418-8_5

[2]

Givargizov E I, 1991, ORIENTED CRYSTALLIZA

[3]

HAMAKAWA Y, 1992, 6TH P INT PHOT SCI E, P3

[4] PERIODIC REGROWTH DURING CRYSTAL-GROWTH [J].