UNCOOLED INSB/IN1-XALXSB MIDINFRARED EMITTER

被引：53

作者：

ASHLEY, T

ELLIOTT, CT

GORDON, NT

HALL, RS

JOHNSON, AD

PRYCE, GJ

机构：

[1] Defence Research Agency, Malvern, Worcestershire WR14 3PS, St. Andrews Road

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 18期

关键词：

D O I：

10.1063/1.111981

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using heterostructures of InSb/In1-xAlxSb, grown by molecular beam epitaxy, diodes have been fabricated which emit at room temperature with a peak wavelength in the range 5.5-5.8 mum and an internal efficiency of 0.2%.

引用

页码：2433 / 2435

页数：3

共 13 条

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