DEPOSITION OF MBA(2)CU(3)O(7-X) THIN-FILMS BY CHANNEL-SPARK METHOD

被引：39

作者：

DEDIU, VI

JIANG, QD

MATACOTTA, FC

SCARDI, P

LAZZARINO, M

NIEVA, G

CIVALE, L

机构：

[1] CNR,ICMAT,AREA RIC ROMA,I-00016 MONTELIBRETTI,ITALY

[2] INFM,TASC LAB,I-34012 TRIESTE,ITALY

[3] UNIV TRENT,DEPT MAT ENGN,I-38050 TRENT,ITALY

[4] COMIS NACL ENERGIA ATOM,CTR ATOM BARILOCHE,RA-8400 BARILOCHE,RIO NEGRO,ARGENTINA

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 1995年 / 8卷 / 03期

关键词：

D O I：

10.1088/0953-2048/8/3/005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Channel-spark pulsed electron beam deposition (CS), a new deposition method based on a simple and inexpensive system, has been used for preparation of high-quality GdBa2Cu3O7-x, Gd1-xEuxBa2Cu3O7-x and YBa2Cu3O7-x thin films epitaxially grown on NdGaO3 and SrTiO3 substrates. Typical critical temperatures for zero DC resistance lie in the intervals 87-89 K for Y-based films and 91.0-92.6 K for Gd- and GdEu-based ones. The transition widths for the best films are less than 0.5 K. The critical current densities reach the values of 3 x 10(6) A cm(-2) at 77 K, zero field.

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收藏

页码：160 / 164

页数：5

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