A STUDY OF EL2 PHOTOQUENCHING PROPERTIES BY PHOTOCONDUCTIVITY MEASUREMENTS OF SI GAAS-CR

被引：3

作者：

FARVACQUE, JL

GRUSON, B

VIGNAUD, D

机构：

[1] Univ des Sciences et Techniques de, Lille Flandres Artois, Villeneuve, d'Ascq, Fr, Univ des Sciences et Techniques de Lille Flandres Artois, Villeneuve d'Ascq, Fr

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1987年 / 2卷 / 05期

关键词：

CHROMIUM AND ALLOYS;

D O I：

10.1088/0268-1242/2/5/004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The time dependence of EL//2 photo-response shows that in the case of semi-insulating chromium-doped GaAs, the well known photoquenching effect is, in fact, preceded by a 'photo-enhancement'. It is shown that this effect cannot be explained using the classical assumption of a single ionized state for EL//2. A tentative explanation involving at least two ionized states is proposed.

引用

页码：268 / 274

页数：7