ELECTRONIC CHARGE-DENSITIES AT VALENCE AND CONDUCTION-BAND EDGES OF ZNSE AND CDTE

被引：16

作者：

WENTZCOVITCH, RM ^{[1
]}

RICHARDSON, SL ^{[1
]}

COHEN, ML ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,CTR ADV MAT,BERKELEY,CA 94720

来源：

PHYSICS LETTERS A | 1986年 / 114卷 / 04期

关键词：

D O I：

10.1016/0375-9601(86)90207-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：203 / 206

页数：4

共 15 条

[1]

BALDERESCHI A, 1979, I PHYS C SER, V43, P1167

[2]

BASSANI F, 1966, SEMICONDUCTORS SEMIM

[3] BAND STRUCTURE OF ALPHA-SN INSB AND CDTE INCLUDING SPIN-ORBIT EFFECTS [J].

BLOOM, S ;

BERGSTRESSER, TK .

SOLID STATE COMMUNICATIONS, 1968, 6 (07) :465-+

[4] CALCULATION OF ENERGY-BAND PRESSURE COEFFICIENTS FROM DIELECTRIC THEORY OF CHEMICAL BOND [J].

CAMPHAUSEN, DL ;

CONNELL, GAN ;

PAUL, W .

PHYSICAL REVIEW LETTERS, 1971, 26 (04) :184-+

[5] SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION OF THE ELECTRONIC-STRUCTURE OF PDH AND PD4H [J].

CHAN, CT ;

LOUIE, SG .

PHYSICAL REVIEW B, 1983, 27 (06) :3325-3337

[6] PRESSURE COEFFICIENTS OF BAND-GAPS IN SEMICONDUCTORS [J].

CHANG, KJ ;

FROYEN, S ;

COHEN, ML .

SOLID STATE COMMUNICATIONS, 1984, 50 (02) :105-107

[7] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[8] ELECTRONIC CHARGE-DENSITIES FOR 2 ISOELECTRONIC SERIES - GE-GAAS-ZNSE AND ALPHA-SN-INSB-CDTE [J].

HUMPHREYS, TP ;

SRIVASTAVA, GP .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 103 (01) :K85-K90

[9] CALCULATION OF HIGH-PRESSURE PHASES OF AL [J].

LAM, PK ;

COHEN, ML .

PHYSICAL REVIEW B, 1983, 27 (10) :5986-5991

[10]

Phillips J.C., 1973, BONDS BANDS SEMICOND

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