TEMPERATURE DEPENDENCE OF THE ENERGY GAP IN MONATOMIC SEMICONDUCTORS

被引：95

作者：

FAN, HY

机构：

来源：

PHYSICAL REVIEW | 1950年 / 78卷 / 06期

关键词：

D O I：

10.1103/PhysRev.78.808.2

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：808 / 809

页数：2

共 6 条

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[2] PHOTOVOLTAIC EFFECT OF PARA NORMAL JUNCTIONS IN GERMANIUM
BECKER, M
FAN, HY
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[3] FROHLICH, 1950, PHIL MAG, V41, P221
[4] LARKHOROVITZ K, COMMUNICATION
[5] ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS
PEARSON, GL
BARDEEN, J
[J]. PHYSICAL REVIEW, 1949, 75 (05): : 865 - 883
[6] ENERGY BANDS AND MOBILITIES IN MONATOMIC SEMICONDUCTORS
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BARDEEN, J
[J]. PHYSICAL REVIEW, 1950, 77 (03): : 407 - 408