ELECTRICAL-PROPERTIES OF CDTE-CL

被引：12

作者：

PETTY, MC

DHARMADASA, IM

ROBERTS, GG

机构：

来源：

关键词：

D O I：

10.1088/0022-3727/13/10/019

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1899 / 1909

页数：11

共 31 条

[1] AGRINSKAYA NV, 1976, SOV PHYS SEMICOND+, V10, P96
[2] ELECTRIC PROPERTIES OF SEMI-INSULATING CRYSTALS CDTE=C1
ARKADYEVA, EN
MATVEEV, OA
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02): : 239 - 240
[3] BARNES CE, 1976, IEEE T NUCL SCI, V21, P177
[4] CHARACTERIZATION OF TRANSPORT PROPERTIES OF HALOGEN-DOPED CDTE USED FOR GAMMA-RAY DETECTORS
BELL, RO
WALD, FV
CANALI, C
NAVA, F
OTTAVIAN.G
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (01) : 331 - 341
[5] TEMPERATURE DEPENDANCE OF FUNDAMENTAL ABSORPTION-EDGE IN CDTE
CAMASSEL, J
AUVERGNE, D
MATHIEU, H
TRIBOULET, R
MARFAING, Y
[J]. SOLID STATE COMMUNICATIONS, 1973, 13 (01) : 63 - 68
[6] de Nobel D., 1959, PHILIPS RES REPORTS, V14, P361
[7] DENOBEL D, 1959, PHILIPS RES REP, V14, P430
[8] COMPENSATION AND MECHANISMS OF ELECTRICAL-CONDUCTION IN PLASTICIZED PVC
DEWSBERRY, R
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (02) : 265 - 272
[9] STUDY OF PHOTO-HALL EFFECT ON SINGLE-CRYSTALS OF CADMIUM TELLURIDE DOPED WITH CHLORINE
HOSCHL, P
MORAVEC, P
MARTINAITIS, A
SAKALAS, A
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1978, 48 (01): : K43 - K46
[10] DETERMINATION AND CHARACTERIZATION OF DEEP LEVELS IN P-CDTE(C1)
HOSCHL, P
POLIVKA, P
PROSSER, V
VANECEK, M
SKRIVANKOVA, M
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02): : 229 - 233