AN EFFICIENT AND ACCURATE SELF-CONSISTENT CALCULATION OF ELECTRONIC STATES IN MODULATION-DOPED HETEROSTRUCTURES

The energy levels, the carrier concentration, and the conduction band profile in a modulation doped heterostructure are obtained by using an efficient self-consistent calculation of Poisson's and Schroedinger's equations. Schroedinger's equation is solved by using a variational technique to overcome the limitations of previous models which are arising from mesh size and discretization. The method is applied to characterize a modulation doped AlGaAs/GaAs single well and a pseudomorphic AlGaAs/InGaAs/GaAs structure. Advantages and limitations of the new method are finally discussed.