MODELS OF COLUMN-III AND COLUMN-V ELEMENTS ON GAAS (110) - APPLICATION TO MBE

被引:75
作者
SKEATH, P
LINDAU, I
SU, CY
SPICER, WE
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期
关键词
D O I
10.1116/1.571125
中图分类号
O59 [应用物理学];
学科分类号
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页码:556 / 560
页数:5
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共 38 条
[21]   LEED AND AES OF STOICHIOMETRIC AND ARSENIC-RICH GAAS(110) SURFACES PREPARED BY MOLECULAR-BEAM EPITAXY [J].
KUBLER, B ;
RANKE, W ;
JACOBI, K .
SURFACE SCIENCE, 1980, 92 (2-3) :519-527
[22]  
LINDAU I, 1980, SYNCHROTRON RAD RES, P259
[23]   SURFACE-BARRIER FORMATION FOR AL CHEMISORBED ON GAAS(110) [J].
MELE, EJ ;
JOANNOPOULOS, JD .
PHYSICAL REVIEW LETTERS, 1979, 42 (16) :1094-1097
[24]  
Mityagin A. Yu., 1977, Soviet Physics - Solid State, V18, P862
[25]  
MOTT NF, COMMUNICATION
[26]   COMPOSITION, STRUCTURE, SURFACE-STATES, AND O-2 STICKING COEFFICIENT FOR DIFFERENTLY PREPARED GAAS(111)AS SURFACES [J].
RANKE, W ;
JACOBI, K .
SURFACE SCIENCE, 1977, 63 (01) :33-44
[27]   GENERATION OF METAL-CLUSTERS CONTAINING FROM 2 TO 500 ATOMS [J].
SATTLER, K ;
MUHLBACH, J ;
RECKNAGEL, E .
PHYSICAL REVIEW LETTERS, 1980, 45 (10) :821-824
[28]   BONDING OF AL AND GA TO GAAS(110) [J].
SKEATH, P ;
LINDAU, I ;
SU, CY ;
CHYE, PW ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :511-516
[29]   UPS AND LEED STUDIES OF GAAS (110) AND (111) AS SURFACES [J].
SKEATH, P ;
SAPERSTEIN, WA ;
PIANETTA, P ;
LINDAU, I ;
SPICER, WE ;
MARK, P .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1219-1222
[30]   INVESTIGATION OF THE MECHANISM FOR SCHOTTKY-BARRIER FORMATION BY GROUP-III METALS ON GAAS(110) [J].
SKEATH, P ;
LINDAU, I ;
CHYE, PW ;
SU, CY ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1143-1148