EFFECT OF A FINITE-WIDTH BARRIER ON BINDING-ENERGY IN MODULATION-DOPED QUANTUM-WELL STRUCTURES

被引:21
作者
CHEN, H
ZHOU, SX
机构
来源
PHYSICAL REVIEW B | 1987年 / 36卷 / 18期
关键词
D O I
10.1103/PhysRevB.36.9581
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:9581 / 9586
页数:6
相关论文
共 10 条
[1]   HYDROGENIC IMPURITY STATES IN A QUANTUM WELL - A SIMPLE-MODEL [J].
BASTARD, G .
PHYSICAL REVIEW B, 1981, 24 (08) :4714-4722
[2]   HYDROGENIC-IMPURITY GROUND-STATE IN GAAS-GA1-XALXAS MULTIPLE QUANTUM-WELL STRUCTURES [J].
CHAUDHURI, S .
PHYSICAL REVIEW B, 1983, 28 (08) :4480-4488
[3]   ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].
DINGLE, R ;
STORMER, HL ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667
[4]  
DINGLE R, 1975, ADV SOLID STATE PHYS, V15
[5]   ENERGY-LEVELS OF HYDROGENIC IMPURITY STATES IN GAAS-GA1-XALXAS QUANTUM WELL STRUCTURES [J].
GREENE, RL ;
BAJAJ, KK .
SOLID STATE COMMUNICATIONS, 1983, 45 (09) :825-829
[6]   SHALLOW IMPURITY CENTERS IN SEMICONDUCTOR QUANTUM WELL STRUCTURES [J].
GREENE, RL ;
BAJAJ, KK .
SOLID STATE COMMUNICATIONS, 1985, 53 (12) :1103-1108
[7]   BINDING-ENERGY OF A DONOR IN A QUANTUM-WELL HETEROSTRUCTURE [J].
JAYAKUMAR, K ;
BALASUBRAMANIAN, S .
PHYSICAL REVIEW B, 1985, 32 (10) :6904-6906
[8]   ELECTRON-TRANSPORT AND BAND-STRUCTURE OF GA1-XALXAS ALLOYS [J].
LEE, HJ ;
JURAVEL, LY ;
WOOLLEY, JC ;
SPRINGTHORPE, AJ .
PHYSICAL REVIEW B, 1980, 21 (02) :659-669
[9]   ENERGY-SPECTRA OF DONORS IN GAAS-GA1-XALXAS QUANTUM WELL STRUCTURES IN THE EFFECTIVE-MASS APPROXIMATION [J].
MAILHIOT, C ;
CHANG, YC ;
MCGILL, TC .
PHYSICAL REVIEW B, 1982, 26 (08) :4449-4457
[10]   BINDING-ENERGY OF THE IMPURITY LEVEL IN THE GA1-XALXAS-GAAS-GA1-YALYAS SUPERLATTICE [J].
TANAKA, K ;
NAGAOKA, M ;
YAMABE, T .
PHYSICAL REVIEW B, 1983, 28 (12) :7068-7074