INTERDIFFUSION IN TITANIUM PERMALLOY THIN-FILMS

被引:11
作者
CHOW, LG
DECKER, SK
POCKER, DJ
PENDLEY, GC
PAPADOPOULOS, J
机构
[1] IBM General Products Division, San Jose
关键词
D O I
10.1109/TMAG.1979.1060379
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the results of investigation of interdiffusion in titanium permalloy thin film. It is found that interdiffusion in titanium-permalloy thin films is very detrimental to the magnetic properties of permalloy. Severe interdiffusion can take place with composite Ti/NiFe film annealed at 250°C for 90 minutes. Auger Analysis indicates the diffusion mechanism involves mainly Ni loss from the permalloy layer and diffusion into the Ti layer. Atmospheric exposure of the Ti layer before NiFe deposition can effectively control the interdiffusion process and prevent loss of magnetoresistive response. The x-ray diffraction data has indicated the formation of a Ni-Ti alloy to which may be attributed the degradation of the magnetic properties of Permalloy. © 1979 IEEE
引用
收藏
页码:1833 / 1835
页数:3
相关论文
共 2 条
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MILLER, RJ ;
GANGULEE, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :244-247
[2]  
PIETROKOWSKY P, 1960, J APPL PHYS, V11, P1763