JUNCTION FORMATION WITH PURE AND DOPED POLYACETYLENE

被引：100

作者：

OZAKI, M ^{[1
]}

PEEBLES, DL ^{[1
]}

WEINBERGER, BR ^{[1
]}

CHIANG, CK ^{[1
]}

GAU, SC ^{[1
]}

HEEGER, AJ ^{[1
]}

MACDIARMID, AG ^{[1
]}

机构：

[1] UNIV PENN,RES STRUCT MATTER LAB,PHILADELPHIA,PA 19104

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 01期

关键词：

D O I：

10.1063/1.90902

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A variety of rectifying junctions have been fabricated using doped and undoped (CH)x. Schottky diodes formed between metallic AsF 5-doped (CH)x and n-type semiconductors indicate high [CH(AsF5)y]x electronegativity. The p-type character of undoped trans- (CH)x is confirmed by Schottky-barrier formation with low-work-function metals. An undoped p- (CH)x: n-ZnS heterojunction has been demonstrated with an open-circuit voltage of 0.8 V. These results point to the potential of (CH)x as a photosensitive material for use in solar-cell applications.

引用

页码：83 / 85

页数：3

共 19 条

[1] CONDUCTING POLYMERS - HALOGEN DOPED POLYACETYLENE
CHIANG, CK
PARK, YW
HEEGER, AJ
SHIRAKAWA, H
LOUIS, EJ
MACDIARMID, AG
[J]. JOURNAL OF CHEMICAL PHYSICS, 1978, 69 (11) : 5098 - 5104
[2] ELECTRICAL-CONDUCTIVITY IN DOPED POLYACETYLENE
CHIANG, CK
FINCHER, CR
PARK, YW
HEEGER, AJ
SHIRAKAWA, H
LOUIS, EJ
GAU, SC
MACDIARMID, AG
[J]. PHYSICAL REVIEW LETTERS, 1977, 39 (17) : 1098 - 1101
[3] SYNTHESIS OF HIGHLY CONDUCTING FILMS OF DERIVATIVES OF POLYACETYLENE, (CH)X
CHIANG, CK
DRUY, MA
GAU, SC
HEEGER, AJ
LOUIS, EJ
MACDIARMID, AG
PARK, YW
SHIRAKAWA, H
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1978, 100 (03) : 1013 - 1015
[4] CHIANG CK, 1978, APPL PHYS LETT, V33, P181
[5] ANISOTROPIC OPTICAL-PROPERTIES OF PURE AND DOPED POLYACETYLENE
FINCHER, CR
PEEBLES, DL
HEEGER, AJ
DRUY, MA
MATSUMURA, Y
MACDIARMID, AG
SHIRAKAWA, H
IKEDA, S
[J]. SOLID STATE COMMUNICATIONS, 1978, 27 (05) : 489 - 494
[6] FINCHER CR, UNPUBLISHED
[7] THERMAL CIS-TRANS ISOMERIZATION AND DECOMPOSITION OF POLYACETYLENE
ITO, T
SHIRAKAWA, H
IKEDA, S
[J]. JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY, 1975, 13 (08) : 1943 - 1950
[8] KWAK JF, 1978, B AM PHYS SOC, V23, P56
[9] METAL-SEMICONDUCTOR SURFACE BARRIERS
MEAD, CA
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1023 - &
[10] SEMICONDUCTOR-METAL TRANSITION IN DOPED (CH)X - THERMOELECTRIC-POWER
PARK, YW
DENENSTEIN, A
CHIANG, CK
HEEGER, AJ
MACDIARMID, AG
[J]. SOLID STATE COMMUNICATIONS, 1979, 29 (11) : 747 - 751

← 1 2 →