INFLUENCE OF THE EXCITON LIFETIME ON RESONANT RAMAN-SCATTERING IN QUANTUM-WELLS

被引：19

作者：

SHIELDS, AJ

CARDONA, M

NOTZEL, R

PLOOG, K

机构：

[1] Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.46.10490

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report huge enhancements in the intensity of LO Raman scattering for photon energies resonant with the band-edge exciton of GaAs/AlAs multiple quantum wells, due to a sharpening of the resonance caused by the increased exciton phase-coherence lifetime. This explains the redshift of the resonance Raman profile with respect to the absorption, the much stronger heavy-hole resonance than that of the light-hole resonance, and the rapid decline of Raman intensity with temperature.

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页码：10490 / 10493

页数：4

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