PLANAR-TYPE GUNN DIODE OF INP

被引：5

作者：

MURAYAMA, K ^{[1
]}

NAKAMURA, Y ^{[1
]}

SHIBAYAMA, A ^{[1
]}

DOHI, A ^{[1
]}

OHMI, T ^{[1
]}

ITO, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL, DEPT ELECTR, MEGURO, TOKYO, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 04期

关键词：

D O I：

10.1143/JJAP.13.662

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：662 / 666

页数：5

共 26 条

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ELECTRONICS LETTERS, 1971, 7 (20) :625-+

[3] MEASUREMENTS ON DIPOLE DOMAINS IN INDIUM PHOSPHIDE [J].

BOERS, PM .

PHYSICS LETTERS A, 1971, A 34 (06) :329-+

[4] MICROWAVE GENERATION BY INP 3-LEVEL TRANSFERRED-ELECTRON OSCILLATORS [J].

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HILSUM, C ;

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MORGAN, JR ;

REES, HD ;

KNIGHT, JR .

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[5] MICROWAVE MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF N-TYPE INP [J].

GLOVER, GH .

APPLIED PHYSICS LETTERS, 1972, 20 (06) :224-&

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GUNN, JB .

SOLID STATE COMMUNICATIONS, 1963, 1 (04) :88-91

[7]

GUNN JB, 1964, 7 P INT C PHYS SEM 2, P199

[8] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC OF N-INP [J].

HAMMAR, C ;

VINTER, B .

SOLID STATE COMMUNICATIONS, 1972, 11 (05) :751-&

[9] DIFFUSION OF HOT-ELECTRONS IN N INDIUM PHOSPHIDE [J].

HAMMAR, C ;

VINTER, B .

ELECTRONICS LETTERS, 1973, 9 (01) :9-10

[10] 3-LEVEL OSCILLATOR - A NEW FORM OF TRANSFERRED-ELECTRON DEVICE [J].

HILSUM, C ;

REES, HD .

ELECTRONICS LETTERS, 1970, 6 (09) :277-&

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