MINIMIZING ALUMINUM-TO-SILICON CONTACT RESISTANCE

被引：7

作者：

MCNEIL, G

机构：

[1] Fairchild Semiconductor, Research and Development Laboratory, Palo Alto, California

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 09期

关键词：

D O I：

10.1149/1.2412307

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The effects of various alloy temperatures and times on aluminum-to-silicon contact resistance were determined using a special test vehicle that simulated integrated circuit processing. Contact resistance was measured to both p- and n-type doped silicon. The electrical data are summarized to show at what alloy conditions minimum contact resistance occurs. © 1969, The Electrochemical Society, Inc. All rights reserved.

引用

页码：1311 / &