CO2 LASER RADIATION ABSORPTION IN SEMI-INSULATING GALLIUM ARSENIDE

[1] BILZ H, 1965, P COPENHAGEN C LATTI, P335

[2] On the fine structure of the residual radiation. [J]. ZEITSCHRIFT FUR PHYSIK, 1933, 82 (9-10): : 551 - 558

[3] COCHRAN W, 1961, J APPL PHYS, V32, P2102, DOI 10.1063/1.1777024

[4] INFRARED ABSORPTION AT 10.6 MU IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (10) : 4091 - +

[5] LATTICE BANDS IN GERMANIUM [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 85 (543P): : 153 - +

[6] GUDMUNDSEN RA, PRIVATE COMMUNICATIO

[7] HORRIGAN FA, TO BE PUBLISHED

[8] IWASA S, 1964, PHYSICS SEMICONDUCTO, P1077

[9] JOHNSON FA, 1965, PROGRESS SEMICONDUCT, V9, P181

[10] INFRARED LATTICE ABSORPTION IN IONIC AND HOMOPOLAR CRYSTALS [J]. PHYSICAL REVIEW, 1955, 97 (01): : 39 - 52

[1] BILZ H, 1965, P COPENHAGEN C LATTI, P335

[2] On the fine structure of the residual radiation. [J]. ZEITSCHRIFT FUR PHYSIK, 1933, 82 (9-10): : 551 - 558

[3] COCHRAN W, 1961, J APPL PHYS, V32, P2102, DOI 10.1063/1.1777024

[4] INFRARED ABSORPTION AT 10.6 MU IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (10) : 4091 - +

[5] LATTICE BANDS IN GERMANIUM [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 85 (543P): : 153 - +

[6] GUDMUNDSEN RA, PRIVATE COMMUNICATIO

[7] HORRIGAN FA, TO BE PUBLISHED

[8] IWASA S, 1964, PHYSICS SEMICONDUCTO, P1077

[9] JOHNSON FA, 1965, PROGRESS SEMICONDUCT, V9, P181

[10] INFRARED LATTICE ABSORPTION IN IONIC AND HOMOPOLAR CRYSTALS [J]. PHYSICAL REVIEW, 1955, 97 (01): : 39 - 52