PHOTON EXCITED FIELD-EMISSION FROM A SEMICONDUCTOR SURFACE

被引：9

作者：

HERMAN, MH

TSONG, TT

机构：

[1] Department of Physics, The Pennsylvania State University, University Park

来源：

PHYSICS LETTERS A | 1979年 / 71卷 / 5-6期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0375-9601(79)90636-4

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Field emission from silicon emitters at cryogenic temperatures and low applied fields is found to be greatly enhanced by illumination of low intensity light. Such enhancement persists even when the photon energy is smaller than the band gap energy. At room temperature, the enhancement is too small to be detected. © 1979.

引用

页码：461 / 463

页数：3

共 14 条

[1] SURFACE STRUCTURE + SURFACE MIGRATION OF GERMANIUM BY FIELD EMISSION MICROSCOPY [J].