ACTIVE MODE-LOCKING OF 1.3-MU-M EXTENDED-CAVITY SILICON CHIP BRAGG REFLECTOR LASER

被引：9

作者：

RAYBON, G ^{[1
]}

TUCKER, RS ^{[1
]}

EISENSTEIN, G ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 25期

关键词：

Light--Reflection - Optical Devices - Semiconducting Silicon;

D O I：

10.1049/el:19881066

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report active mode-locking of an extended-cavity silicon chip Bragg reflector laser. Pulses of 27 ps duration at repetition rates up to 7 GHz, have been achieved with a controllable narrow optical spectrum.

引用

页码：1563 / 1565

页数：3

共 7 条

[1]

Bessonov Yu. L., 1982, Soviet Journal of Quantum Electronics, V12, P1510, DOI 10.1070/QE1982v012n11ABEH006176

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[5] PERFORMANCE-CHARACTERISTICS OF A 1.5-MU-M SINGLE-FREQUENCY SEMICONDUCTOR-LASER WITH AN EXTERNAL WAVE-GUIDE BRAGG REFLECTOR [J].

OLSSON, NA ;

HENRY, CH ;

KAZARINOV, RF ;

LEE, HJ ;

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (02) :143-147

[6]

OLSSON NA, 1987, OFC 87 RENO

[7] 16GBIT/S FIBER TRANSMISSION EXPERIMENT USING OPTICAL TIME-DIVISION MULTIPLEXING [J].

TUCKER, RS ;

EISENSTEIN, G ;

KOROTKY, SK ;

BUHL, LL ;

VESELKA, JJ ;

RAYBON, G ;

KASPER, BL ;

ALFERNESS, RC .

ELECTRONICS LETTERS, 1987, 23 (24) :1270-1271

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