ZERO BIAS ANOMALY DUE TO ELASTIC TUNNELING IN MIM STRUCTURES

The elastic resonant tunneling process is analysed in a three‐dimensional way, by means of a new stationary resonance model (SRM). Taking the Green's function of the potential barrier of an asymmetric MIM structure as a starting point, the resonant current density due to the localized states which are in the insulators is calculated. Peaks in the logarithmic conductance derivate (zero bias anomaly), as well as a great current sensitivity to temperature at low bias are proved to exist. The experimental results in the literature agree with the theoretical predictions. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA