ELECTRON, HOLE AND EXCITON TUNNELING IN A BIASED QUANTUM-WELL STRUCTURE

被引:8
作者
FERREIRA, R
LIU, HW
DELALANDE, C
BASTARD, G
PALMIER, JF
ETIENNE, B
机构
[1] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
[2] LAB MICROSTRUCT & MICROELECTR,F-92220 BAGNEUX,FRANCE
关键词
D O I
10.1016/0039-6028(90)90868-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Low temperature photoluminescence experiments are performed in a biased asymmetrical double GaAs/GaAlAs quantum well structure. The results are compared with calculations of defect-assisted tunnelling times of excitons. Evidence of tunnelling from a direct exciton to a crossed exciton formed with an electron and a hole localized in adjacent quantum wells is found. © 1990.
引用
收藏
页码:192 / 194
页数:3
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