LUMINESCENCE AND OPTICALLY DETECTED ELECTRON-SPIN-RESONANCE IN A-AS2S3

被引：40

作者：

MURAYAMA, K

SUZUKI, H

NINOMIYA, T

机构：

来源：

关键词：

D O I：

10.1016/0022-3093(80)90317-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：915 / 920

页数：6

共 12 条

[1] OPTICALLY INDUCED METASTABLE PARAMAGNETIC STATES IN AMORPHOUS-SEMICONDUCTORS
BISHOP, SG
STROM, U
TAYLOR, PC
[J]. PHYSICAL REVIEW B, 1977, 15 (04): : 2278 - 2294
[2] Kolomiets B. T., 1970, Journal of Non-Crystalline Solids, V4, P289, DOI 10.1016/0022-3093(70)90053-0
[3] Lucovsky G., 1972, J NONCRYST SOLIDS, V8-10, P185, DOI 10.1016/0022-3093(72)90134-2
[4] MOTT NF, 1971, ELECTRONIC PROCESSES
[5] LUMINESCENCE WITH SHORT DECAY TIME IN ARSENIC CHALCOGENIDE GLASSES
MURAYAMA, K
NINOMIYA, T
SUZUKI, H
MORIGAKI, K
[J]. SOLID STATE COMMUNICATIONS, 1977, 24 (02) : 197 - 200
[6] MURAYAMA K, UNPUBLISHED
[7] RESONANT RAMAN-SCATTERING IN AMORPHOUS AS2S3
RAZZETTI, C
FONTANA, MP
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 70 (01): : 173 - 180
[8] STATES IN GAP IN GLASSY SEMICONDUCTORS
STREET, RA
MOTT, NF
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (19) : 1293 - 1296
[9] LUMINESCENCE IN AMORPHOUS-SEMICONDUCTORS
STREET, RA
[J]. ADVANCES IN PHYSICS, 1976, 25 (04) : 397 - 453
[10] TEMPERATURE AND FIELD-DEPENDENCE OF OPTICAL-ABSORPTION EDGE IN AMORPHOUS AS2S3
STREET, RA
SEARLE, TM
AUSTIN, IG
SUSSMANN, RS
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (08): : 1582 - 1594