SILICON N-P-N GROWN JUNCTION TRANSISTORS

被引：25

作者：

TANENBAUM, M

VALDES, LB

BUEHLER, E

HANNAY, NB

机构：

来源：

关键词：

D O I：

10.1063/1.1722071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：686 / 692

页数：7

共 10 条

[1]

BURTON, 1953, J CHEM PHYS, V21, P1991

[2] DESIGN THEORY OF JUNCTION TRANSISTORS [J].

EARLY, JM .

BELL SYSTEM TECHNICAL JOURNAL, 1953, 32 (06) :1271-1312

[3]

FULLER, 1955, ACTA METALLURGICA, V3, P97

[4]

FULLER, 1954, PHYS REV, V96, pA833

[5]

GUILLEMIN EA, 1931, COMMUNICATION NETWOR, V2, pCH4

[6] P-N JUNCTIONS PRODUCED BY GROWTH RATE VARIATION [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 88 (01) :139-139

HALL, RN .

SHOCKLEY, W .

BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489

[9]

TEAL, 1951, PHYS REV, V81, P637

WEBSTER, WM .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (06) :914-920