ESTIMATION OF CARRIER CAPTURE TIME OF QUANTUM-WELL LASERS BY SPONTANEOUS EMISSION-SPECTRA

被引：39

作者：

HIRAYAMA, H ^{[1
]}

YOSHIDA, J ^{[1
]}

MIYAKE, Y ^{[1
]}

ASADA, M ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT ELECT & ELECTR ENGN,MEGURO KU,TOKYO 152,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 20期

关键词：

D O I：

10.1063/1.108176

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carrier capture time was estimated for separate confinement heterostructure single quantum-well lasers by measuring the spontaneous emission from the optical confinement layers which increases with current even above the laser threshold due to finite carrier capture time of the well. By fitting theoretical analysis to the measurement, hole capture time was found to be the dominant factor for the spontaneous emission increase, and was estimated as 0.2-0.25 ps for GaInAs/GaInAsP/InP quantum well lasers. Additional transport time of 0.1-0.2 ps across the barrier was also obtained for multiquantum well lasers. It appears that the finiteness of carrier capture time affects not only the threshold current but also the differential quantum efficiency in high power operation through the absorption loss by the carriers in the optical confinement layers.

引用

页码：2398 / 2400

页数：3

共 8 条

[1] DENSITY-MATRIX THEORY OF SEMICONDUCTOR-LASERS WITH RELAXATION BROADENING MODEL - GAIN AND GAIN-SUPPRESSION IN SEMICONDUCTOR-LASERS [J].