2 PHOTON-EXCITED STIMULATED RECOMBINATION EMISSION IN INSB

被引：6

作者：

MANLIEF, SK ^{[1
]}

PALIK, ED ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20390

来源：

APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 09期

关键词：

D O I：

10.1063/1.1654705

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：443 / 445

页数：3

共 18 条

[1]

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[2]

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[3]

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[4] MECHANISM OF BAND-GAP LASER ACTION IN INSB DIODES ( 1.9 DEGREES K 10-50 KG E ) [J].

BELL, RL ;

ROGERS, KT .

APPLIED PHYSICS LETTERS, 1964, 5 (01) :9-&

[5]

BENOIT C, 1962, P INTERNATIONAL C PH, P875

[6]

Grisar R., 1971, Optics Communications, V3, P415, DOI 10.1016/0030-4018(71)90270-7

[7] OPTICAL SPECTRA OF DONOR IMPURITIES IN INSB IN HIGH MAGNETIC FIELDS [J].

KAPLAN, R .

PHYSICAL REVIEW, 1969, 181 (03) :1154-&

[8]

MANLIEF SK, 1973, B AM PHYS SOC, V18, P91

[9] MULTIPHOTON PLASMA PRODUCTION AND STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS [J].

PATEL, CKN ;

FLEURY, PA ;

SLUSHER, RE ;

FRISCH, HL .

PHYSICAL REVIEW LETTERS, 1966, 16 (22) :971-&

[10] OPTICALLY PUMPED SEMICONDUCTOR LASER (INSB 4.2 DEGREES K PUMPED BY GAAS LASER EMISSION AT 5.3 MU E) [J].

PHELAN, RJ ;

REDIKER, RH .

APPLIED PHYSICS LETTERS, 1965, 6 (04) :70-&

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