COMPUTER-SIMULATION OF MATERIALS PROCESSING PLASMA DISCHARGES

被引：50

作者：

KLINE, LE ^{[1
]}

KUSHNER, MJ ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES | 1989年 / 16卷 / 01期

关键词：

D O I：

10.1080/10408438908244626

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1 / 35

页数：35

共 193 条

[1]

ALBRITTION DL, 1978, DATA NUCL DATA TABLE, V22, P2

[2] THE PLASMA-ETCHING OF POLYSILICON WITH CF3CL/ARGON DISCHARGES .1. PARAMETRIC MODELING AND IMPEDANCE ANALYSIS [J].

ALLEN, KD ;

SAWIN, HH ;

MOCELLA, MT ;

JENKINS, MW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (11) :2315-2325

[3] THE PLASMA-ETCHING OF POLYSILICON WITH CF3CL/ARGON DISCHARGES .2. MODELING OF ION-BOMBARDMENT ENERGY-DISTRIBUTIONS [J].

ALLEN, KD ;

SAWIN, HH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (11) :2326-2331

[4] ELECTRON DENSITY DISTRIBUTION IN A HIGH FREQUENCY DISCHARGE IN THE PRESENCE OF PLASMA RESONANCE [J].

ALLIS, WP ;

BROWN, SC ;

EVERHART, E .

PHYSICAL REVIEW, 1951, 84 (03) :519-522

[5]

ALLIS WP, 1956, ENCY PHYSICS

[6] A KINETIC-MODEL FOR PLASMA-ETCHING SILICON IN A SF6/O2 RF DISCHARGE [J].

ANDERSON, HM ;

MERSON, JA ;

LIGHT, RW .

IEEE TRANSACTIONS ON PLASMA SCIENCE, 1986, 14 (02) :156-164

[7] LARGE-SIGNAL TIME-DOMAIN MODELING OF LOW-PRESSURE RF GLOW-DISCHARGES [J].

BARNES, MS ;

COLTER, TJ ;

ELTA, ME .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) :81-89

[8] EVALUATED KINETIC AND PHOTOCHEMICAL DATA FOR ATMOSPHERIC CHEMISTRY .1. CODATA TASK GROUP ON CHEMICAL-KINETICS [J].

BAULCH, DL ;

COX, RA ;

CRUTZEN, PJ ;

HAMPSON, RF ;

KERR, JA ;

TROE, J ;

WATSON, RT .

JOURNAL OF PHYSICAL AND CHEMICAL REFERENCE DATA, 1982, 11 (02) :327-496

[9] SPATIAL DISTRIBUTION OF ELECTRON DENSITY AND ELECTRIC FIELD STRENGTH IN A HIGH-FREQUENCY DISCHARGE . CRITERIA FOR SIMILARITY [J].

BELL, AT .

INDUSTRIAL & ENGINEERING CHEMISTRY FUNDAMENTALS, 1970, 9 (01) :160-&

[10]

BIEHLER S, 1989, APPL PHYS LETT, V54, P311

← 1 2 3 4 5 6 7 8 9 10 →