DX CENTER AND LARGE LATTICE-RELAXATION EFFECTS IN ALGAAS - TE STUDIED BY X-RAY-DIFFRACTION

被引：8

作者：

LESZCZNSKI, M

SUSKI, T

KOWALSKI, G

机构：

[1] Polish Acad. of Sci., Warszawa

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 01期

关键词：

D O I：

10.1088/0268-1242/6/1/011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lattice relaxation induced by Te-related DX centres in AlGaAs was examined by low-temperature x-ray measurements of the shape of the rocking curve. Changes in Al content as well as the persistent photoconductivity effect were used to depopulate the localized state of the DX centre and to eliminate the lattice deformation of the respective host crystal. Depopulating led to significant narrowing of the x-ray rocking curve. Estimation of the lattice rearrangement accompanying formation of the DX state strongly supports the large lattice relaxation model for the Te-related DX centre.

引用

页码：59 / 62

页数：4

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