STUDY OF POINT-DEFECT AGGREGATES IN NEARLY PERFECT SILICON SINGLE-CRYSTALS USING A HIGH-RESOLUTION DIFFUSE-X-RAY SCATTERING TECHNIQUE

被引：12

作者：

LAL, K

SINGH, BP

机构：

来源：

ACTA CRYSTALLOGRAPHICA SECTION A | 1980年 / 36卷 / MAR期

关键词：

D O I：

10.1107/S0567739480000381

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：178 / 182

页数：5

共 22 条

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[5]

Krivoglaz M., 1969, THEORY XRAY THERMAL

[6] HIGH-RESOLUTION DIFFUSE-X-RAY SCATTERING STUDY FROM NEARLY PERFECT SILICON SINGLE-CRYSTALS [J].

LAL, K ;

SINGH, BP ;

VERMA, AR .

ACTA CRYSTALLOGRAPHICA SECTION A, 1979, 35 (MAR) :286-295

[7]

LAL K, 1979, INDIAN J PHYS PT-A, V53, P72

[8]

LAL K, 1978, ACTA CRYSTALLOGR A, V34, pS273

[9] CHARACTERIZATION OF DISLOCATIONS IN GADOLINIUM GALLIUM GARNET SINGLE-CRYSTALS BY TRANSMISSION X-RAY TOPOGRAPHY [J].

LAL, K ;

MADER, S .

JOURNAL OF CRYSTAL GROWTH, 1976, 32 (03) :357-362

[10] HIGH-RESOLUTION EXPERIMENTAL-TECHNIQUES OF MEASUREMENT OF DIFFUSE X-RAY-SCATTERING FROM SINGLE-CRYSTALS [J].

LAL, K ;

SINGH, BP .

SOLID STATE COMMUNICATIONS, 1977, 22 (01) :71-74

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