CR PROFILES IN SEMI-INSULATING GAAS AFTER ANNEALING WITH AND WITHOUT SIO2 ENCAPSULANTS IN A H2-AS4 ATMOSPHERE

被引：31

作者：

EU, V ^{[1
]}

FENG, M ^{[1
]}

HENDERSON, WB ^{[1
]}

KIM, HB ^{[1
]}

WHELAN, JM ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 05期

关键词：

D O I：

10.1063/1.91735

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：473 / 475

页数：3

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