TRANSPORT AND STRUCTURE OF ION IRRADIATED HTSC THIN-FILMS

被引:31
作者
MEYER, O [1 ]
KROENER, T [1 ]
REMMEL, J [1 ]
GEERK, J [1 ]
LINKER, G [1 ]
STREHLAU, B [1 ]
WOLF, T [1 ]
机构
[1] KERNFORSCHUNGSZENTRUM KARLSRUHE GMBH,INST TECH PHYS,W-7500 KARLSRUHE 1,GERMANY
关键词
D O I
10.1016/0168-583X(92)95101-V
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Thin films of c-axis and a-axis oriented REBa2Cu3O7-delta (RE = Y, Gd, Eu) deposited by magnetron sputtering were irradiated with H+, He+ and Ar2+ ions. The changes of the transport properties were studied as a function of the crystal direction, the angle of incidence and the ion mass. The T(c)-depression rates are lowered for aligned ion irradiation due to the reduced nuclear energy loss of the channeled particles. For off-axis irradiated a-axis and c-axis oriented thin films the T(c) depression rates are similar; however, they are quite different for H+ and Ar+ ion irradiated samples. This is attributed to different defect structures which are probably also responsible for the different temperature dependence of rho which is proportional to exp(T-1/4) or approximately exp(T-1) in the metal to insulator transition regime for Ar2+ and H+ ion irradiation, respectively. Channeling measurements on YBa2Cu3O7-delta single crystals at various temperatures and damage levels showed that the main contribution to the irradiation reduced Debye temperature is of static nature.
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收藏
页码:539 / 545
页数:7
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