QUANTIZED CURRENT IN A QUANTUM-DOT TURNSTILE USING OSCILLATING TUNNEL BARRIERS

被引：423

作者：

KOUWENHOVEN, LP ^{[1
]}

JOHNSON, AT ^{[1
]}

VANDERVAART, NC ^{[1
]}

HARMANS, CJPM ^{[1
]}

FOXON, CT ^{[1
]}

机构：

[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 67卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.67.1626

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have observed a quantized current in a lateral quantum dot, defined by metal gates in the two-dimensional electron gas (2DEG) of a GaAs/AlGaAs heterostructure. By modulating the tunnel barriers in the 2DEG with two phase-shifted rf signals, and employing the Coulomb blockade of electron tunneling, we produced quantized current plateaus in the current-voltage characteristics at integer multiples of ef, where f is the rf frequency. This demonstrates that an integer number of electrons pass through the quantum dot each rf cycle.

引用

页码：1626 / 1629

页数：4

共 15 条

[1] VIRTUAL ELECTRON-DIFFUSION DURING QUANTUM TUNNELING OF THE ELECTRIC CHARGE [J].