AN ULTIMATELY LOW-THRESHOLD SEMICONDUCTOR-LASER WITH SEPARATE QUANTUM CONFINEMENTS OF SINGLE FIELD MODE AND SINGLE ELECTRON-HOLE PAIR

被引：11

作者：

YAMANISHI, M ^{[1
]}

YAMAMOTO, Y ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, BASIC RES LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 1A期

关键词：

MICROCAVITY; MODIFIED SPONTANEOUS EMISSION; QUANTUM-CONFINED STARK EFFECT; QUANTUM DOT;

D O I：

10.1143/JJAP.30.L60

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel semiconductor surface-emitting laser structure is proposed. All spontaneous emission is coupled into a single lasing mode by means of a quantum microcavity, and discrete electron-hole pair emission is made free of absorption by means of a dc-biased quantum dot. The quantum microcavity modified the angle distribution of a vacuum field fluctuation that is a source of spontaneous emission. The dc-biased quantum dot separates the emission and absorption lines by image-charge-induced change in the electric field. The threshold current of such a semiconductor laser can be reduced to below 100 nA.

引用

页码：L60 / L63

页数：4

共 5 条

[1] ONE-ATOM MASER [J].