ANOMALIES IN CRYSTAL-GROWTH BY CZOCHRALSKI TECHNIQUE

被引：34

作者：

PAJACZKOWSKA, A

BYSZEWSKI, P

机构：

[1] INST ELECTR MAT TECHNOL,PL-01919 WARSAW,POLAND

[2] RES & DEV CTR VACUUM ELECTR,PL-00241 WARSAW,POLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 128卷 / 1-4期

关键词：

D O I：

10.1016/S0022-0248(07)80026-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Single crystals of CaNdAlO4 (CNA) and SrLaAlO4 (SLA) were grown by the Czochralski technique. The anisotropic properties of the compounds are reflected in the process of crystal growth. A flat crystal/melt interface is unstable and crystals grow on {101} type planes which form the convex growth surface.

引用

页码：694 / 698

页数：5

共 17 条

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