CONDUCTANCE OF SMALL SEMICONDUCTOR-DEVICES

被引：42

作者：

KASTALSKY, AA ^{[1
]}

SHUR, MS ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

来源：

SOLID STATE COMMUNICATIONS | 1981年 / 39卷 / 06期

关键词：

D O I：

10.1016/0038-1098(81)90442-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：715 / 718

页数：4

相关论文

共 4 条

[1] SEEGER K, 1973, SEMICONDUCTOR PHYSIC
[2] NEAR BALLISTIC ELECTRON-TRANSPORT IN GAAS DEVICES AT 77-DEGREES-K
SHUR, MS
EASTMAN, LF
[J]. SOLID-STATE ELECTRONICS, 1981, 24 (01) : 11 - 18
[3] BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW-TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGIC
SHUR, MS
EASTMAN, LF
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1677 - 1683
[4] SHUR MS, 1980, 1980 P IEDM WASH, P618