THE ROLE OF VACUUM ISOTHERMAL ANNEALING IN SYNTHESIS OF YBa2Cu3O7-x THIN FILMS

被引:1
作者
Chromik, S. [1 ]
Jergel, M. [1 ]
Benacka, S. [1 ]
Hanic, F. [2 ]
Liday, J. [3 ]
机构
[1] SAS, Inst Elect Engn, Bratislava 84239, Slovakia
[2] SAS, Inst Inorgan Chem, Bratislava 84239, Slovakia
[3] Slovak Tech Univ, Dept Microelect, Bratislava 84219, Slovakia
关键词
D O I
10.1109/77.233893
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A low-oxygen-pressure annealing process has been examined which enables us to remove fluorine from YBa2Cu3Ox thin films prepared by sequential deposition of BaF2, Cu and Y constituents onto MgO single crystall substrates. The annealing process is performed without presence of water vapor. X-ray diffraction and Auger electron spectroscopy analyses of films obtained at various technological steps during the annealing have shown that the reduction of fluorine starts already during the first stages of annealing. Possible chemical reactions characterizing this process are discussed.
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收藏
页码:1098 / 1101
页数:4
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