SURFACE MORPHOLOGY OF LIQUID-PHASE-EPITAXIAL INP

被引：6

作者：

GUHA, S ^{[1
]}

MAJERFELD, A ^{[1
]}

MOYES, N ^{[1
]}

ROBSON, PN ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,MAPPIN ST,SHEFFIELD S1 3JD,ENGLAND

来源：

ELECTRONICS LETTERS | 1975年 / 11卷 / 14期

关键词：

D O I：

10.1049/el:19750229

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：303 / 304

页数：2

共 8 条

[1] INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH [J].

ASTLES, MG ;

SMITH, FGH ;

WILLIAMS, EW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) :1750-1757

[2] SOME OBSERVATIONS OF SURFACE MORPHOLOGIES OF GAAS LAYERS GROWN BY LIQUID-PHASE EPITAXY [J].

CROSSLEY, I ;

SMALL, MB .

JOURNAL OF CRYSTAL GROWTH, 1973, 19 (03) :160-168

[3] GROWTH FACETS ON III-V INTERMETALLIC COMPOUNDS [J].

FAUST, JW ;

JOHN, HF .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (AUG) :1119-&

[4] LIQUID-PHASE EPITAXY OF INP [J].

HESS, K ;

STATH, N ;

BENZ, KW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) :1208-1212

[5] PREPARATION OF MULTILAYER LPE HETEROSTRUCTURES WITH CRYSTALLINE SOLID SOLUTIONS OF ALXGA1-XAS - HETEROSTRUCTURE LASERS [J].

PANISH, MB ;

SUMSKI, S ;

HAYASHI, I .

METALLURGICAL TRANSACTIONS, 1971, 2 (03) :795-&

[6]

PETERS RC, 1972, P S GAAS RELATED COM, P55

[7] SURFACE MORPHOLOGY OF LIQUID-PHASE EPITAXIAL LAYERS [J].

SAUL, RH ;

ROCCASECCA, DD .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) :1983-1988

[8]

SOLOMON R, 1968, P INT S GAAS, P11

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