2-STEP PHOTOCONDUCTIVITY BY DISLOCATIONS IN SILICON

被引：12

作者：

KOS, HJ ^{[1
]}

NEUBERT, D ^{[1
]}

机构：

[1] INST BERLIN,PHYS TECH BUNDESANSTALT,BERLIN,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 44卷 / 01期

关键词：

D O I：

10.1002/pssa.2210440127

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：259 / 264

页数：6

共 15 条

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FIGIELSK.T
[J]. PHYSICA STATUS SOLIDI, 1965, 9 (02): : 555 - &
[2] THEORY OF CARRIER RECOMBINATION AT DISLOCATIONS IN GERMANIUM
FIGIELSKI, T
[J]. PHYSICA STATUS SOLIDI, 1964, 6 (02): : 429 - 440
[3] FIGIELSKI T, 1974, INT SCH PHYSICS COND
[4] ELECTRICAL PROPERTIES OF DISLOCATIONS IN SILICON .I. EFFECTS ON CARRIER LIFETIME
GLAENZER, RH
JORDAN, AG
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (04) : 247 - +
[5] HAASEN P, 1970, NBS317 SPEC PUBL, P1231
[6] LABUSCH R, 1975, I PHYS C SER, V23, P56
[7] MAGDEBURG H, 1966, Z ANGEW PHYSIK, V20, P465
[8] MANY A, 1965, SEMICONDUCTOR SURFAC, P377
[9] MOBIUS W, 1973, THESIS TU BERLIN
[10] NEUBERT D, 1973, INT PHYS C, V15, P220