共 12 条
[1]
[Anonymous], PHYS REV B
[3]
PHOTOEMISSION AND BAND-STRUCTURE RESULTS FOR NISI-2
[J].
PHYSICAL REVIEW B,
1982, 25 (12)
:7598-7602
[4]
ENERGETICS OF SILICIDE INTERFACE FORMATION
[J].
PHYSICAL REVIEW LETTERS,
1985, 54 (23)
:2517-2520
[5]
SCHOTTKY-BARRIER HEIGHT MEASUREMENTS OF TYPE-A AND TYPE-B NISI2 EPILAYERS ON SI
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1986, 4 (03)
:860-864
[6]
GROUND-STATE THERMOMECHANICAL PROPERTIES OF SOME CUBIC ELEMENTS IN LOCAL-DENSITY FORMALISM
[J].
PHYSICAL REVIEW B,
1975, 12 (04)
:1257-1261
[7]
MINIMAL BASIS-SETS IN THE LINEAR MUFFIN-TIN ORBITAL METHOD - APPLICATION TO THE DIAMOND-STRUCTURE CRYSTALS C, SI, AND GE
[J].
PHYSICAL REVIEW B,
1986, 34 (04)
:2439-2449
[8]
ELECTRONIC-STRUCTURE AND PROPERTIES OF NISI2 AND COSI2 IN THE FLUORITE AND ADAMANTANE STRUCTURES
[J].
PHYSICAL REVIEW B,
1987, 36 (05)
:2493-2503
[9]
INFLUENCE OF INTERFACE QUALITY ON THE SCHOTTKY-BARRIER HEIGHT IN THE EPITAXIAL NI-SILICIDE SI(111) SYSTEM
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1985, 3 (04)
:1190-1191
[10]
SCHOTTKY BARRIERS OF EPITAXIAL NISI2 ON SI(111)
[J].
APPLIED PHYSICS LETTERS,
1988, 52 (03)
:227-229