PRESSURE-DEPENDENCE OF THE RESISTIVITY IN THE AMORPHOUS AS40SEXTE60-X SYSTEM

被引：11

作者：

RAMANI, G ^{[1
]}

GIRIDHAR, A ^{[1
]}

SINGH, AK ^{[1
]}

RAO, KJ ^{[1
]}

机构：

[1] INDIAN INST SCI,SOLID STATE & STRUCT CHEM UNIT,BANGALORE 560012,INDIA

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1979年 / 39卷 / 05期

关键词：

D O I：

10.1080/13642817908245809

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The pressure dependences of the resistivity and the activation energy in the amorphous As40SexTe60–x system have been measured up to 80 kbar with a tungsten carbide opposed-anvil apparatus. A decrease in both these parameters with increasing pressure was observed for all samples (x = 0–40). Possible explanations are proposed. © 1979 Taylor & Francis Ltd.

引用

页码：385 / 388

页数：4

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