IMPURITY BANDS IN KONDO INSULATORS

被引:105
作者
SCHLOTTMANN, P [1 ]
机构
[1] FLORIDA STATE UNIV,CTR MAT RES & TECHNOL,TALLAHASSEE,FL 32306
来源
PHYSICAL REVIEW B | 1992年 / 46卷 / 02期
关键词
D O I
10.1103/PhysRevB.46.998
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Kondo insulators like Ce3Bi4Pt3 and CeNiSn are compounds with small-band-gap semiconductor properties. Nonmagnetic impurities, so-called Kondo holes, break the translational invariance and hence the coherence of the ground state. Isolated impurities give rise to a bound state in the gap, which pins the Fermi level and has magnetic properties (Curie susceptibility and Schottky anomaly in the specific heat). A finite concentration of Kondo holes gives rise to an impurity band inside the gap of the f-electron density of states, whose height and width are proportional to square-root c for small concentrations. The specific heat is proportional to T at very low temperatures and the susceptibility is Pauli-like at low T. The correlations within the f band are introduced via a self-energy, evaluated to second-order perturbation in U. We use the (1/d)-expansion method of Schweitzer and Czycholl to leading order in which the k integrations are properly carried out, but the k dependence of the self-energy is neglected. The main effect of U is to narrow the gap, as well as the impurity band.
引用
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页码:998 / 1004
页数:7
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