FORMATION OF A PHOTOLUMINESCENT SURFACE ON N-SI BY IRRADIATION WITHOUT AN EXTERNALLY APPLIED POTENTIAL

被引：21

作者：

ZHANG, ZW ^{[1
]}

LERNER, MM ^{[1
]}

ALEKEL, T ^{[1
]}

KESZLER, DA ^{[1
]}

机构：

[1] OREGON STATE UNIV,CTR ADV MAT RES,CORVALLIS,OR 97331

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 06期

关键词：

D O I：

10.1149/1.2221655

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A porous, luminescent surface is produced on n-Si by irradiation in anhydrous or aqueous hydrogen fluoride without an externally applied potential. The photoluminescence spectra of the resulting surfaces are similar to those obtained by the anodization method. A porous surface is only produced when electrical contact is made between the n-Si disk and a metal surface such as Au or Hg, and, in the aqueous system, when dissolved O2 is present.

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页码：L97 / L98

页数：2

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