INTEGRATION PROCESS FOR PHOTONIC INTEGRATED-CIRCUITS USING PLASMA DAMAGE-INDUCED LAYER INTERMIXING

被引：18

作者：

OOI, BS

BRYCE, AC

MARSH, JH

机构：

[1] Department of Electronics and Electrical Engineering, University of Glasgow

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 06期

关键词：

ION BEAM EFFECTS; SEMICONDUCTOR JUNCTION LASERS; INTEGRATED CIRCUITS; PLASMA TECHNIQUES;

D O I：

10.1049/el:19950342

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new quantum-well intermixing process in GaAs/AlGaAs structures, based on ion bombardment damage, has been developed. Bandgap tuned lasers and extended cavity lasers have been fabricated. Results show that the quality of the material is still high after intermixing. Losses as low as 18 dB cm(-1) have been measured in the passive waveguides of the extended-cavity lasers.

引用

页码：449 / 451

页数：3

共 3 条

[1] QUANTUM-WELL LASER WITH INTEGRATED PASSIVE WAVE-GUIDE FABRICATED BY NEUTRAL IMPURITY DISORDERING [J].