ELECTROLYTIC ETCHING OF GAN

[1] GALLIUM NITRIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (07) : 1200 - &

[2] HOLMES PJ, 1962, ELECTROCHEMISTRY SEM, P290

[3] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J]. APPLIED PHYSICS LETTERS, 1969, 15 (10) : 327 - &

[4] Pankove J.I., 1972, J LUMIN, V5, P84, DOI DOI 10.1016/0022-2313(72)90038-5

[5] PANKOVE JI, 1971, RCA REV, V32, P383

[6] WHITAKER HH, PRIVATE COMMUNICATIO

[1] GALLIUM NITRIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (07) : 1200 - &

[2] HOLMES PJ, 1962, ELECTROCHEMISTRY SEM, P290

[3] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J]. APPLIED PHYSICS LETTERS, 1969, 15 (10) : 327 - &

[4] Pankove J.I., 1972, J LUMIN, V5, P84, DOI DOI 10.1016/0022-2313(72)90038-5

[5] PANKOVE JI, 1971, RCA REV, V32, P383

[6] WHITAKER HH, PRIVATE COMMUNICATIO