DEFECT GENERATION AT SILICON SURFACES DURING ETCHING AND INITIAL-STAGE OF OXIDATION

[1] Higashi, Becker, Chabal, Becker, Appl. Phys. Letters, 58, (1991)

[2] Graf, Grundner, Schulz, Oxidation of HF-treated Si wafer surfaces in air, Journal of Applied Physics, 68, (1990)

[3] Morita, Ohmi, Hasegawa, Teramoto, Native Oxide Growth on Silicon Surface in Ultrapure Water and Hydrogen Peroxide, Japanese Journal of Applied Physics, 29, (1990)

[4] Heilig, Flietner, Reineke, J Phys D:Appl Phys, 12, (1979)

[5] Flietner, Surf. Sci., 200, (1988)

[6] Flietner, Proc 7th Conf. Insulating Films on Semiconductors (INFOS) 1991, (1991)

[7] Angermann, Dittrich, Flietner, Proc.2nd Intern. Symp. of UCPSS, (1994)

[8] Heilig, Surf. Sci., 44, (1974)

[9] Flietner, Fussel, Heilig, Physik der Halbleiteroberfläche, 16, (1985)

[10] Dittrich, Angermann, Fussel, Flietner, Electronic properties of the HF-passivated Si(111) surface during the initial oxidation in air, Physica Status Solidi (a), 140, (1993)

[1] Higashi, Becker, Chabal, Becker, Appl. Phys. Letters, 58, (1991)

[2] Graf, Grundner, Schulz, Oxidation of HF-treated Si wafer surfaces in air, Journal of Applied Physics, 68, (1990)

[3] Morita, Ohmi, Hasegawa, Teramoto, Native Oxide Growth on Silicon Surface in Ultrapure Water and Hydrogen Peroxide, Japanese Journal of Applied Physics, 29, (1990)

[4] Heilig, Flietner, Reineke, J Phys D:Appl Phys, 12, (1979)

[5] Flietner, Surf. Sci., 200, (1988)

[6] Flietner, Proc 7th Conf. Insulating Films on Semiconductors (INFOS) 1991, (1991)

[7] Angermann, Dittrich, Flietner, Proc.2nd Intern. Symp. of UCPSS, (1994)

[8] Heilig, Surf. Sci., 44, (1974)

[9] Flietner, Fussel, Heilig, Physik der Halbleiteroberfläche, 16, (1985)

[10] Dittrich, Angermann, Fussel, Flietner, Electronic properties of the HF-passivated Si(111) surface during the initial oxidation in air, Physica Status Solidi (a), 140, (1993)