HOT ELECTRON RELAXATION TIMES IN 2-VALLEY SEMICONDUCTORS AND THEIR EFFECT ON BULK-MICROWAVE OSCILLATORS

被引：24

作者：

DAS, P

BHARAT, R

机构：

来源：

关键词：

D O I：

10.1063/1.1728223

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：386 / &

共 7 条

[1] INTERVALLEY TRANSFER MECHANISM OF NEGATIVE RESISTIVITY IN BULK SEMICONDUCTORS
BUTCHER, PN
FAWCETT, W
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (554P): : 1205 - &
[2] COPELAND JA, 1967, INT SOLID STATE CIRC
[3] DAS P, 1966, 6 P INT C MICR GEN A
[4] DAS P, 1966, ELECTRON LETT, V2, P258
[5] DAS PK, UNPUBLISHED
[6] A STUDY OF ENERGY-LOSS PROCESSES IN GERMANIUM AT HIGH ELECTRIC FIELDS USING MICROWAVE TECHNIQUES
GIBSON, AF
GRANVILLE, JW
PAIGE, EGS
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (3-4) : 198 - 217
[7] 1966, IEEE T ELECTRON DEVI, VED13