ANALYSIS OF RADIATION-ENHANCED DIFFUSION OF ALUMINUM IN SILICON

被引：20

作者：

ITOH, T

OHDOMARI, I

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 01期

关键词：

D O I：

10.1063/1.1658370

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：434 / &

共 10 条

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