TRANSIENT-BEHAVIOR AT PLANAR MICROELECTRODES - A COMPARISON OF DIFFUSION CURRENT AT RING, BAND AND DISK ELECTRODES

被引:31
作者
COPE, DK
TALLMAN, DE
机构
[1] N DAKOTA STATE UNIV, DEPT CHEM, FARGO, ND 58105 USA
[2] N DAKOTA STATE UNIV, DEPT MATH, FARGO, ND 58105 USA
关键词
D O I
10.1016/0022-0728(90)87111-V
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The integral equation method is an efficient, accurate numerical approach for computing transient current at planar microelectrodes. This method has been used to compute the diffusion-limited current at disk, band, and ring electrodes. In this paper we present a critical assessment of the influence of geometry on the behavior of the transient current. The disk and band geometries are shown to be limiting forms of the ring geometry. A normalization is introduced which permits differences in transient behavior at the various geometries to be ascribed to purely geometric factors. © 1990.
引用
收藏
页码:85 / 92
页数:8
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