MICROSTRUCTURAL AND ELECTRICAL-PROPERTIES OF PZT THIN-FILMS BY SOL-GEL PROCESS

Sol-gel method has been used for PZT thin films deposition onto platinized silicon substrates. PZT thin films microstructure depends on the platinum electrode preparation and the thermal treatment duration. PZT is nucleated under a crystalline form generally described as ''rosette''. The influence of the platinum electrode morphology on the final grain size and the effect of the titanium as a contact layer between the platinum and the silicon have been investigated. Different thermal treatments have been investigated: the Rapid Thermal Annealing (RTA) method avoids pyrochlore phase formation and leads to small grain sizes. Electrical measurements have been done using top electrodes (platinum) obtained by microlithography. The influence of the parameters described on the hysteresis loop and resistivity is shown.