THEORETICAL-STUDY OF ELECTRONIC PROPERTIES OF TRIGONAL SE UNDER PRESSURE

被引：23

作者：

WENDEL, H ^{[1
]}

MARTIN, RM ^{[1
]}

CHADI, DJ ^{[1
]}

机构：

[1] XEROX CORP,RES CTR,PALO ALTO,CA 94304

来源：

PHYSICAL REVIEW LETTERS | 1977年 / 38卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.38.656

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：656 / 660

页数：5

共 21 条

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[3]

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[6]

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[7] ELECTRONIC-STRUCTURE OF TRIGONAL AND AMORPHOUS SE AND TE [J].

JOANNOPOULOS, JD ;

SCHLUTER, M ;

COHEN, ML .

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[8] PRESSURE-DEPENDENCE OF REFLECTIVITY OF SE - EXPERIMENTAL-EVIDENCE FOR LARGE LOCAL-FIELD CORRECTIONS [J].

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FORBERG, RR .

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[9]

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[10] TEMPERATURE-DEPENDENT ELECTROABSORPTION ON INDIRECT EDGE OF TRIGONAL SELENIUM [J].

LINGELBACH, W ;

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